IndiumV3, Chine, Analysis, bibRecord, 000B70

Energy band alignment between Pb(Zr,Ti)O3 and high and low work function conducting oxides-from hole to electron injection

Identifieur interne : 000B70 ( Chine/Analysis ); précédent : 000B69; suivant : 000B71

Energy band alignment between Pb(Zr,Ti)O3 and high and low work function conducting oxides-from hole to electron injection

Auteurs : RBID : Pascal:10-0465618

Descripteurs français

Pascal (Inist)
- Structure bande, Travail sortie, Injection électron, Interface, Spectre photoélectron RX, Réaction interface, Niveau Fermi, Structure électronique, Barrière Schottky, Hauteur barrière, Bande valence, PZT, Oxyde de ruthénium, Oxyde d'indium, Oxyde d'étain, Matériau électrode, O Pb Ti Zr, Pb(Zr,Ti)O3, RuO2, In2O3, 7330, 7115.

English descriptors

KwdEn :
- Band structure, Barrier height, Electrode material, Electron injection, Electronic structure, Fermi level, Indium oxide, Interface reaction, Interfaces, PZT, Ruthenium oxide, Schottky barriers, Tin oxide, Valence bands, Work functions, X-ray photoelectron spectra.

Abstract

The interface formation between Pb(Zr,Ti)O₃ (PZT) and RuO₂ and between PZT and In₂O₃: Sn (ITO), respectively, was characterized using in situ x-ray photoelectron spectroscopy (XPS). No interface reaction was observed for the interfaces studied. The Fermi level position at the interface (Schottky barrier height) is strongly different for the two electrode materials. A Fermi level position of 1.0 ± 0.1 eV above the valence band maximum (VBM) is observed for the contact between PZT and the high work function oxide RuO₂. For the contact between PZT and the low work function oxide ITO a Fermi level position of 2.1 ± 0.2 eV above the VBM is found.

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to stream Main, to step Corpus: 003C24
to stream Main, to step Repository: 004237
to stream Chine, to step Extraction: 000B70

Links to Exploration step

Pascal:10-0465618

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Energy band alignment between Pb(Zr,Ti)O<sub>3</sub>
 and high and low work function conducting oxides-from hole to electron injection</title>
<author><name sortKey="Chen, F" uniqKey="Chen F">F. Chen</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Technische Universität Darmstadt, Institute of Materials Science, Petersenstrasse 23</s1>
<s2>64287 Darmstadt</s2>
<s3>DEU</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14>
<country>Allemagne</country>
<placeName><region type="land" nuts="1">Hesse (Land)</region>
<region type="district" nuts="2">District de Darmstadt</region>
<settlement type="city">Darmstadt</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Schafranek, R" uniqKey="Schafranek R">R. Schafranek</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Technische Universität Darmstadt, Institute of Materials Science, Petersenstrasse 23</s1>
<s2>64287 Darmstadt</s2>
<s3>DEU</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14>
<country>Allemagne</country>
<placeName><region type="land" nuts="1">Hesse (Land)</region>
<region type="district" nuts="2">District de Darmstadt</region>
<settlement type="city">Darmstadt</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Li, S" uniqKey="Li S">S. Li</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Technische Universität Darmstadt, Institute of Materials Science, Petersenstrasse 23</s1>
<s2>64287 Darmstadt</s2>
<s3>DEU</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14>
<country>Allemagne</country>
<placeName><region type="land" nuts="1">Hesse (Land)</region>
<region type="district" nuts="2">District de Darmstadt</region>
<settlement type="city">Darmstadt</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Wu, W B" uniqKey="Wu W">W. B. Wu</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China</s1>
<s2>Hefei 230026</s2>
<s3>CHN</s3>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>République populaire de Chine</country>
<wicri:noRegion>Hefei 230026</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Klein, A" uniqKey="Klein A">A. Klein</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Technische Universität Darmstadt, Institute of Materials Science, Petersenstrasse 23</s1>
<s2>64287 Darmstadt</s2>
<s3>DEU</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14>
<country>Allemagne</country>
<placeName><region type="land" nuts="1">Hesse (Land)</region>
<region type="district" nuts="2">District de Darmstadt</region>
<settlement type="city">Darmstadt</settlement>
</placeName>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">10-0465618</idno>
<date when="2010">2010</date>
<idno type="stanalyst">PASCAL 10-0465618 INIST</idno>
<idno type="RBID">Pascal:10-0465618</idno>
<idno type="wicri:Area/Main/Corpus">003C24</idno>
<idno type="wicri:Area/Main/Repository">004237</idno>
<idno type="wicri:Area/Chine/Extraction">000B70</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">0022-3727</idno>
<title level="j" type="abbreviated">J. phys., D. Appl. phys. : (Print)</title>
<title level="j" type="main">Journal of physics. D, Applied physics : (Print)</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Band structure</term>
<term>Barrier height</term>
<term>Electrode material</term>
<term>Electron injection</term>
<term>Electronic structure</term>
<term>Fermi level</term>
<term>Indium oxide</term>
<term>Interface reaction</term>
<term>Interfaces</term>
<term>PZT</term>
<term>Ruthenium oxide</term>
<term>Schottky barriers</term>
<term>Tin oxide</term>
<term>Valence bands</term>
<term>Work functions</term>
<term>X-ray photoelectron spectra</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Structure bande</term>
<term>Travail sortie</term>
<term>Injection électron</term>
<term>Interface</term>
<term>Spectre photoélectron RX</term>
<term>Réaction interface</term>
<term>Niveau Fermi</term>
<term>Structure électronique</term>
<term>Barrière Schottky</term>
<term>Hauteur barrière</term>
<term>Bande valence</term>
<term>PZT</term>
<term>Oxyde de ruthénium</term>
<term>Oxyde d'indium</term>
<term>Oxyde d'étain</term>
<term>Matériau électrode</term>
<term>O Pb Ti Zr</term>
<term>Pb(Zr,Ti)O3</term>
<term>RuO2</term>
<term>In2O3</term>
<term>7330</term>
<term>7115</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">The interface formation between Pb(Zr,Ti)O<sub>3</sub>
 (PZT) and RuO<sub>2</sub>
 and between PZT and In<sub>2</sub>
O<sub>3</sub>
: Sn (ITO), respectively, was characterized using in situ x-ray photoelectron spectroscopy (XPS). No interface reaction was observed for the interfaces studied. The Fermi level position at the interface (Schottky barrier height) is strongly different for the two electrode materials. A Fermi level position of 1.0 ± 0.1 eV above the valence band maximum (VBM) is observed for the contact between PZT and the high work function oxide RuO<sub>2</sub>
. For the contact between PZT and the low work function oxide ITO a Fermi level position of 2.1 ± 0.2 eV above the VBM is found.</div>
</front>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0022-3727</s0>
</fA01>
<fA02 i1="01"><s0>JPAPBE</s0>
</fA02>
<fA03 i2="1"><s0>J. phys., D. Appl. phys. : (Print)</s0>
</fA03>
<fA05><s2>43</s2>
</fA05>
<fA06><s2>29</s2>
</fA06>
<fA08 i1="01" i2="1" l="ENG"><s1>Energy band alignment between Pb(Zr,Ti)O<sub>3</sub>
 and high and low work function conducting oxides-from hole to electron injection</s1>
</fA08>
<fA11 i1="01" i2="1"><s1>CHEN (F.)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>SCHAFRANEK (R.)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>LI (S.)</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>WU (W. B.)</s1>
</fA11>
<fA11 i1="05" i2="1"><s1>KLEIN (A.)</s1>
</fA11>
<fA14 i1="01"><s1>Technische Universität Darmstadt, Institute of Materials Science, Petersenstrasse 23</s1>
<s2>64287 Darmstadt</s2>
<s3>DEU</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>5 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China</s1>
<s2>Hefei 230026</s2>
<s3>CHN</s3>
<sZ>4 aut.</sZ>
</fA14>
<fA20><s2>295301.1-295301.6</s2>
</fA20>
<fA21><s1>2010</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>5841</s2>
<s5>354000194750200130</s5>
</fA43>
<fA44><s0>0000</s0>
<s1>© 2010 INIST-CNRS. All rights reserved.</s1>
</fA44>
<fA45><s0>40 ref.</s0>
</fA45>
<fA47 i1="01" i2="1"><s0>10-0465618</s0>
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<fA60><s1>P</s1>
</fA60>
<fA61><s0>A</s0>
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</fA64>
<fA66 i1="01"><s0>GBR</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>The interface formation between Pb(Zr,Ti)O<sub>3</sub>
 (PZT) and RuO<sub>2</sub>
 and between PZT and In<sub>2</sub>
O<sub>3</sub>
: Sn (ITO), respectively, was characterized using in situ x-ray photoelectron spectroscopy (XPS). No interface reaction was observed for the interfaces studied. The Fermi level position at the interface (Schottky barrier height) is strongly different for the two electrode materials. A Fermi level position of 1.0 ± 0.1 eV above the valence band maximum (VBM) is observed for the contact between PZT and the high work function oxide RuO<sub>2</sub>
. For the contact between PZT and the low work function oxide ITO a Fermi level position of 2.1 ± 0.2 eV above the VBM is found.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B70C30</s0>
</fC02>
<fC02 i1="02" i2="3"><s0>001B70A15</s0>
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<fC03 i1="01" i2="3" l="FRE"><s0>Structure bande</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="3" l="ENG"><s0>Band structure</s0>
<s5>01</s5>
</fC03>
<fC03 i1="02" i2="3" l="FRE"><s0>Travail sortie</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="3" l="ENG"><s0>Work functions</s0>
<s5>02</s5>
</fC03>
<fC03 i1="03" i2="X" l="FRE"><s0>Injection électron</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="X" l="ENG"><s0>Electron injection</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="X" l="SPA"><s0>Inyección electrón</s0>
<s5>03</s5>
</fC03>
<fC03 i1="04" i2="3" l="FRE"><s0>Interface</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="3" l="ENG"><s0>Interfaces</s0>
<s5>04</s5>
</fC03>
<fC03 i1="05" i2="3" l="FRE"><s0>Spectre photoélectron RX</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="3" l="ENG"><s0>X-ray photoelectron spectra</s0>
<s5>05</s5>
</fC03>
<fC03 i1="06" i2="X" l="FRE"><s0>Réaction interface</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="X" l="ENG"><s0>Interface reaction</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="X" l="SPA"><s0>Reacción interfase</s0>
<s5>06</s5>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Niveau Fermi</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>Fermi level</s0>
<s5>07</s5>
</fC03>
<fC03 i1="08" i2="3" l="FRE"><s0>Structure électronique</s0>
<s5>08</s5>
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<s5>08</s5>
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<fC03 i1="09" i2="3" l="FRE"><s0>Barrière Schottky</s0>
<s5>09</s5>
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<s5>09</s5>
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<fC03 i1="10" i2="3" l="FRE"><s0>Hauteur barrière</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="3" l="ENG"><s0>Barrier height</s0>
<s5>10</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>Bande valence</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="3" l="ENG"><s0>Valence bands</s0>
<s5>11</s5>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>PZT</s0>
<s2>NK</s2>
<s5>15</s5>
</fC03>
<fC03 i1="12" i2="3" l="ENG"><s0>PZT</s0>
<s2>NK</s2>
<s5>15</s5>
</fC03>
<fC03 i1="13" i2="X" l="FRE"><s0>Oxyde de ruthénium</s0>
<s5>16</s5>
</fC03>
<fC03 i1="13" i2="X" l="ENG"><s0>Ruthenium oxide</s0>
<s5>16</s5>
</fC03>
<fC03 i1="13" i2="X" l="SPA"><s0>Rutenio óxido</s0>
<s5>16</s5>
</fC03>
<fC03 i1="14" i2="X" l="FRE"><s0>Oxyde d'indium</s0>
<s5>17</s5>
</fC03>
<fC03 i1="14" i2="X" l="ENG"><s0>Indium oxide</s0>
<s5>17</s5>
</fC03>
<fC03 i1="14" i2="X" l="SPA"><s0>Indio óxido</s0>
<s5>17</s5>
</fC03>
<fC03 i1="15" i2="X" l="FRE"><s0>Oxyde d'étain</s0>
<s5>18</s5>
</fC03>
<fC03 i1="15" i2="X" l="ENG"><s0>Tin oxide</s0>
<s5>18</s5>
</fC03>
<fC03 i1="15" i2="X" l="SPA"><s0>Estaño óxido</s0>
<s5>18</s5>
</fC03>
<fC03 i1="16" i2="X" l="FRE"><s0>Matériau électrode</s0>
<s5>19</s5>
</fC03>
<fC03 i1="16" i2="X" l="ENG"><s0>Electrode material</s0>
<s5>19</s5>
</fC03>
<fC03 i1="16" i2="X" l="SPA"><s0>Material electrodo</s0>
<s5>19</s5>
</fC03>
<fC03 i1="17" i2="3" l="FRE"><s0>O Pb Ti Zr</s0>
<s4>INC</s4>
<s5>46</s5>
</fC03>
<fC03 i1="18" i2="3" l="FRE"><s0>Pb(Zr,Ti)O3</s0>
<s4>INC</s4>
<s5>47</s5>
</fC03>
<fC03 i1="19" i2="3" l="FRE"><s0>RuO2</s0>
<s4>INC</s4>
<s5>48</s5>
</fC03>
<fC03 i1="20" i2="3" l="FRE"><s0>In2O3</s0>
<s4>INC</s4>
<s5>49</s5>
</fC03>
<fC03 i1="21" i2="3" l="FRE"><s0>7330</s0>
<s4>INC</s4>
<s5>71</s5>
</fC03>
<fC03 i1="22" i2="3" l="FRE"><s0>7115</s0>
<s4>INC</s4>
<s5>73</s5>
</fC03>
<fN21><s1>305</s1>
</fN21>
</pA>
</standard>
</inist>
</record>

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Energy band alignment between Pb(Zr,Ti)O3 and high and low work function conducting oxides-from hole to electron injection

Energy band alignment between Pb(Zr,Ti)O3 and high and low work function conducting oxides-from hole to electron injection

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri